AI Article Synopsis
- The research shows that ballistic hole transport occurs in specially designed one-dimensional quantum wires made from a strained SiGe/Ge/SiGe material.
- Conductance plateaus are found at integer multiples of 2 e/h, indicating stable electronic states, and the behavior of these plateaus in magnetic fields points to varying g-factors that suggest certain characteristics of the material's holes.
- Notably, the study highlights that these quantum devices can maintain quantized ballistic conductance over lengths of up to 600 nm, paving the way for advancements in quantum spintronic technologies.
Article Abstract
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2 e/ h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.
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| http://dx.doi.org/10.1021/acs.nanolett.8b01457 | DOI Listing |
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