Densely populated edge-terminated vertically aligned two-dimensional MoS nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 µA/cm was measured. The low turn-on field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS with sharp and exposed edges. Our findings show that the fabricated MoS NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.
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| http://dx.doi.org/10.3762/bjnano.9.160 | DOI Listing |
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