Here, room-temperature solution-processed inorganic p-type copper iodide (CuI) thin-film transistors (TFTs) are reported for the first time. The spin-coated 5 nm thick CuI film has average hole mobility (µ ) of 0.44 cm V s and on/off current ratio of 5 × 10 . Furthermore, µ increases to 1.93 cm V s and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO dielectric layer replacing traditional SiO . Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution-processed inorganic p-type semiconductor inks and related electronics.
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