In this work, an atomic layer deposited (ALD) AlO ultrathin layer was introduced to passivate the ZnO-nanoparticle (NP) buffer layer of inverted polymer solar cells (PSCs) based on P3HT:PCBM. The surface morphology of the ZnO-NP/AlO interface was systematically analyzed by using a variety of tools, in particular transmission electron microscopy (TEM), evidencing a conformal ALD-AlO deposition. The thickness of the AlO layers was optimized at the nanoscale to boost electron transport of the ZnO-NP layer, which can be attributed to the suppression of oxygen vacancy defects in ZnO-NPs confirmed by photoluminescence measurement. The optimal inverted PSCs passivated by ALD-AlO exhibited an ∼22% higher power conversion efficiency than the control devices with a pristine ZnO-NP buffer layer. The employment of the ALD-AlO passivation layer with precisely controlled thickness provides a promising approach to develop high efficiency PSCs with novel polymer materials.
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