Multi-Valley Superconductivity in Ion-Gated MoS Layers.

Nano Lett

Department of Applied Science and Technology , Politecnico di Torino , 10129 Torino , Italy.

Published: August 2018

AI Article Synopsis

  • The text discusses how transition metal dichalcogenides (TMDs) can exhibit superconductivity when influenced by an electric field due to their unique two-dimensional properties.
  • Experimental findings suggest that the superconductivity in MoS is linked to a multi-valley Fermi surface, instead of just the expected two electron pockets.
  • Low-temperature transport measurements reveal that emerging superconductivity correlates with the filling of various electron pockets and changes in Fermi surface topology, pointing to new avenues for discovering superconductors.

Article Abstract

Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multivalley Fermi surface (FS) is associated with the SC state, involving six electron pockets at Q/Q'. Here, we perform low-temperature transport measurements in ion-gated MoS flakes. We show that a fully multivalley FS is associated with the SC onset. The Q/Q' valleys fill for doping ≳ 2 × 10 cm, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q  and Q . The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.

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Source
http://dx.doi.org/10.1021/acs.nanolett.8b01390DOI Listing

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