Introduction: Penile intra-epithelial neoplasia (PIN) are precancerous lesions, characterized by architectural and cytological abnormalities of the genital epithelium, from which can arise squamous carcinomas.
Methods: A literature review was performed on the Medline database, considering the articles listed between October 2007 and October 2017 dealing with PIN, using the following keywords "intraepithelial neoplasia" or "Bowen's disease" or "erythroplasia of Queyrat" or "bowenoid papulosis" and "penis ». Papers were selected according to their language (English and French) and their relevance.
Results: One hundred seventy four articles related to PIN were listed. Twenty-five of them were selected for their relevance. The analysis of the references of these articles identified 6 relevant papers published before October 2007, which were considered for this review based on a total of thirty-one articles. We describe clinical and pathological characteristics of PIN, emphasizing treatment modalities.
Conclusion: Urologists should distinguish HPV-related and non HPV-related PIN, both of them sharing clinical presentation, but needing different management.
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http://dx.doi.org/10.1016/j.purol.2018.05.008 | DOI Listing |
JBJS Essent Surg Tech
January 2025
The Ohio State University College of Medicine, Columbus, Ohio.
Background: An all-inside endoscopic flexor hallucis longus (FHL) tendon transfer is indicated for the treatment of chronic, full-thickness Achilles tendon defects. The aim of this procedure is to restore function of the gastrocnemius-soleus complex while avoiding the wound complications associated with open procedures.
Description: This procedure can be performed through 2 endoscopic portals, a posteromedial portal (the working portal) and a posterolateral portal (the visualization portal).
Angew Chem Int Ed Engl
January 2025
Qingdao Institute of BioEnergy and Bioprocess Technology Chinese Academy of Sciences, Key Laboratory of Photoelectric Conversion and Utilization of Solar Energy, No. 189 Songling Road, 266101, Qingdao, CHINA.
Due to high binding energy and extremely short diffusion distance of Frenkel excitons in common organic semiconductors at early stage, mechanism of interface charge transfer-mediated free carrier generation has dominated the development of bulk heterojunction (BHJ) organic solar cells (OSCs). However, considering the advancements in materials and device performance, it is necessary to reexamine the photoelectric conversion in current-stage efficient OSCs. Here, we propose that the conjugated materials with specific three-dimensional donor-acceptor conjugated packing potentially exhibit distinctive charge photogeneration mechanism, which spontaneously split Wannier-Mott excitons to free carriers in pure phases.
View Article and Find Full Text PDFPolymers (Basel)
December 2024
Mechanical Engineering Department, Dunarea de Jos University of Galati, 800201 Galati, Romania.
This paper presents an analysis of four clutch disc friction materials (from different manufacturers) used in manual transmissions. Scanning electron microscopy and energy-dispersive X-ray spectroscopy were employed for the microstructural and chemical characterisation of the friction materials. To reveal the tribological properties of the selected clutch discs, three measurements of the friction coefficient between the material and the cast iron disc were conducted.
View Article and Find Full Text PDFPolymers (Basel)
December 2024
School of Mechanical and Electrical Engineering, Changchun University of Science and Technology, Changchun 130022, China.
The curing process of hair-pin motor stator insulation is critical, as residual stress increases the risk of partial discharge and shortens a motor's lifespan. However, studies on the stress-induced defects during insulation varnish curing remain limited. This research integrates three-dimensional numerical simulations and experimental analysis to develop a curing model based on unsaturated polyester imide resin, aiming to explore the mechanisms of residual stress formation and optimization strategies.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system. The leakage current and breakdown voltage of the diode are systematically studied. Due to the beveled sidewall treated by the fluorine plasma, the diodes achieve an excellent breakdown voltage (V) of 790 V and a low reverse leakage current.
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