Thin films of ≈50 nm thickness with Ba/Ti-ratios ranging from 0.8 to 1.06 were prepared by depositing alternating layers of Ba(OH)2 and TiO2. Annealing at 750 °C promoted the solid-solid transformation into polycrystalline BaTiO3 films containing a mixture of the perovskite and the hexagonal polymorphs with average crystallite sizes smaller than 14 nm and without impurity phases. This, together with an increase of the cubic lattice parameters for Ba-rich films, suggests an extended metastable solubility range for the perovskite-phase in these nanocrystalline thin films on both sides of the stoichiometric composition. Mapping of the cation distribution utilizing energy-filtered transmission electron microscopy corroborates defect accommodation within the BaTiO3 grains. While the cation off-stoichiometry in thermodynamic equilibrium is negligible for BaTiO3, the metastable extended solubility range in the thin films can be directly correlated to the low annealing temperature and nanocrystalline nature. The leakage current behavior can be explained by the formation of Schottky defects for nonstoichiometric films, and the cation ratio has a distinct impact on the dielectric properties: while excess-BaO has a marginal detrimental effect on the permittivity, the dielectric constant declines rapidly by more than 50% towards the Ti-rich side. The present findings highlight the importance of compositional control for the synthesis of nanocrystalline BaTiO3 thin films, in particular for low annealing and/or deposition temperatures. Our synthesis approach using alternating layers of Ba(OH)2 and TiO2 provides a route to precisely control the cation stoichiometry.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/c8nr01176a | DOI Listing |
Nat Commun
December 2024
Key Laboratory of Advanced Polymeric Materials of Shanghai, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, P. R. China.
As integrated circuits have developed towards the direction of complexity and miniaturization, there is an urgent need for low dielectric constant materials to effectively realize high-fidelity signal transmission. However, there remains a challenge to achieve ultralow dielectric constant and ultralow dielectric loss over a wide temperature range, not to mention having excellent thermal conductivity and processability concurrently. We herein prepare dual-linker freestanding covalent organic framework films with tailorable fluorine content via interfacial polymerization.
View Article and Find Full Text PDFNat Commun
December 2024
Department of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice University, Houston, TX, 77005, USA.
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
View Article and Find Full Text PDFACS Appl Energy Mater
December 2024
Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09107 Chemnitz, Germany.
Transforming thin films into high-order stacks has proven effective for robust energy storage in macroscopic configurations like cylindrical, prismatic, and pouch cells. However, the lack of tools at the submillimeter scales has hindered the creation of similar high-order stacks for micro- and nanoscale energy storage devices, a critical step toward autonomous intelligent microsystems. This Spotlight on Applications article presents recent advancements in micro-origami technology, focusing on shaping nano/micrometer-thick films into three-dimensional architectures to achieve folded or rolled structures for microscale energy storage devices.
View Article and Find Full Text PDFACS Appl Energy Mater
December 2024
School of Chemistry, University of Bristol, Cantocks Close, BS8 1TS Bristol, U.K.
Rationalizing the role of chemical interactions in the precursor solutions on the structure, morphology, and performance of thin-film CuZnSn(S,Se) (CZTSSe) is key for the development of bifacial and other photovoltaic (PV) device architectures designed by scalable solution-based methods. In this study, we uncover the impact of dimethylformamide (DMF) and isopropanol (IPA) solvent mixtures on cation complexation and rheology of the precursor solution, as well as the corresponding morphology, composition, and PV performance of CZTSSe thin-film grown on fluorine-doped tin oxide (FTO). We find that increasing the proportion of IPA leads to a nonlinear increase in dynamic viscosity due to the strong repulsion between DMF and IPA, which is characterized by an interaction cohesion parameter of 3.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!