The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10 cm to 3·10 cm. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.
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| http://dx.doi.org/10.1038/s41598-018-27911-2 | DOI Listing |
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