Electronic structure manipulation of graphene dots for effective hydrogen evolution from photocatalytic water decomposition.

Nanoscale

Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan. and Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, Tainan 70101, Taiwan and Center of Applied Nanomedicine, National Cheng Kung University, Tainan 70101, Taiwan.

Published: June 2018

This paper presents a heteroatom doping strategy to manipulate the structure of graphene-based photocatalysts for effective hydrogen production from aqueous solution. Oxygenation of graphene creates a bandgap to produce semiconducting graphene oxide, nitrogen doping extends the resonant π-conjugation to prolong the charge lifetime, and sulfur doping breaks the electron neutrality to facilitate charge transfer. Accordingly, ammonia-treated sulfur-nitrogen-co-doped graphene oxide dots (A-SNGODs) are synthesized by annealing graphene oxide sheets in sulfur-ammonia, oxidizing the sheets into dots, and then hydrothermally treating the dots in ammonia. The A-SNGODs exhibit a high nitrogen content in terms of quaternary and amide groups that are formed through sulfur-mediated reactions. The peripheral amide facilitates orbital conjugations to enhance the photocatalytic activity, whereas the quaternary nitrogen patches vacancy defects to improve stability. The simultaneous presence of electron-withdrawing S and electron-donating N atoms in the A-SNGODs facilitates charge separation and results in reactive electrons. When suspended in an aqueous triethanolamine solution, Pt-deposited A-SNGODs demonstrate a hydrogen-evolution quantum yield of 29% under monochromatic 420 nm irradiation. The A-SNGODs exhibit little activity decay under 6-day visible-light irradiation. This study demonstrates the excellence of the heteroatom-doping strategy in producing stable and active graphene-based materials for photoenergy conversion.

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Source
http://dx.doi.org/10.1039/c8nr02441cDOI Listing

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