Most photoanodes commonly applied in solar fuel research (e.g., of FeO, BiVO, TiO, or WO) are only active and stable in alkaline electrolytes. Silicon (Si)-based photocathodes on the other hand are mainly studied under acidic conditions due to their instability in alkaline electrolytes. Here, we show that the in-diffusion of nickel into a 3D Si structure, upon thermal annealing, yields a thin (sub-100 nm), defect-free nickel silicide (NiSi) layer. This has allowed us to design and fabricate a Si microwire photocathode with a NiSi interlayer between the catalyst and the Si microwires. Upon electrodeposition of the catalyst (here, nickel molybdenum) on top of the NiSi layer, an efficient, Si-based photocathode was obtained that is stable in strongly alkaline solutions (1 M KOH). The best-performing, all-earth-abundant microwire array devices exhibited, under AM 1.5G simulated solar illumination, an ideal regenerative cell efficiency of 10.1%.
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http://dx.doi.org/10.1021/acsenergylett.8b00267 | DOI Listing |
ACS Nano
April 2024
Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94 T9PX Ireland.
Metal silicides have received significant attention due to their high process compatibility, low resistivity, and structural stability. In nanowire (NW) form, they have been widely prepared using metal diffusion into preformed Si NWs, enabling compositionally controlled high-quality metal silicide nanostructures. However, unlocking the full potential of metal silicide NWs for next-generation nanodevices requires an increased level of mechanistic understanding of this diffusion-driven transformation.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2023
Intelligent Components and Sensors Research Section, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea.
Field electron emission from carbon nanotubes (CNT) is preceded by the transport of electrons from the cathode metal to emission sites. Specifically, a supporting layer indispensable for adhesion of CNT paste emitters onto the cathode metal would impose a potential barrier, depending on its work function and interfacial electron transport behaviors. In this paper, we investigated the supporting layer of silicon carbide and nickel nanoparticles reacted onto a Kovar alloy (Fe-Ni-Co) cathode substrate, which has been adopted for reliable CNT paste emitters.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2023
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany.
This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either an n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN), is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic-layer-deposited oxide.
View Article and Find Full Text PDFNanoscale
August 2023
School of Integrated Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea.
Metal-assisted chemical etching (MACE) has received much attention from researchers because it can be used to fabricate plasma-free anisotropic etching profiles for semiconductors. However, the etching mechanism of MACE is based on the catalytic reaction of noble metals, which restricts its use in complementary metal oxide semiconductor (CMOS) processes. To obtain process compatibility, we developed catalytic Ni after alloying it with Si as a substitute for noble metals in the MACE of Si substrates.
View Article and Find Full Text PDFNanomaterials (Basel)
February 2022
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Korea.
In this study, the efficient fabrication of nickel silicide (NiSi) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor properties. To validate the efficacy of the NiSi formation process by MWA, NiSi is also prepared via the conventional rapid thermal annealing (RTA) process. The Rs of the MWA NiSi decreases with increasing microwave power, and becomes saturated at 600 W, thus showing lower resistance than the 500 °C RTA NiSi.
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