Taking Bismuth Titanate (Bi₄Ti₃O) as a Aurivillius-type compound with = 3 for example, the ion (W/Cr) doping effect on the lattice distortion and interlayer mismatch of Bi₄Ti₃O structure were investigated by stress analysis, based on an elastic model. Since oxygen-octahedron rotates in the ab-plane, and inclines away from the c-axis, a lattice model for describing the status change of oxygen-octahedron was built according to the substituting mechanism of W/Cr for Ti, which was used to investigate the variation of orthorhombic distortion degree () of Bi₄Ti₃O with the doping content. The analysis shows that the incorporation of W/Cr into Bi₄Ti₃O tends to relieve the distortion of pseudo-perovskite layer, which also helps it to become more stiff. Since the bismuth-oxide layer expands while the pseudo-perovskite layer tightens, an analytic model for the plane stress distribution in the crystal lattice of Bi₄Ti₃O was developed from the constitutive relationship of alternating layer structure. The calculations reveal that the structural mismatch of Bi₄Ti₃O is constrained in the ab-plane of a unit cell, since both the interlayer mismatch degree and the total strain energy vary with the doping content in a similar trend to the lattice parameters of ab-plane.
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http://dx.doi.org/10.3390/ma11050821 | DOI Listing |
J Phys Chem Lett
January 2025
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
Nature
January 2025
Department of Physics, Columbia University, New York, NY, USA.
The discovery of superconductivity in twisted bilayer and trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and/or twisted heterostructures of other two-dimensional materials, such as transition metal dichalcogenides (TMDs).
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Engineering, Key University Laboratory of Highly Efficient Utilization of Solar Energy and Sustainable Development of Guangdong, Southern University of Science and Technology, Shenzhen, 518055, China.
Nickel oxide (NiO) is considered as a potential hole transport material in the fabrication of lead-tin (Pb-Sn) perovskite solar cells (PSCs) for tandem applications. However, the energy level mismatch and unfavorable redox reactions between Ni species and Sn at the NiO/perovskite interface pose challenges. Herein, high-performance Pb-Sn-based inorganic PSCs are demonstrated by modulating the NiO/perovskite interface with a multifunctional 4-aminobenzenesulfonic acid (4-ABSA) interlayer.
View Article and Find Full Text PDFNat Commun
January 2025
School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
Interlayer coupling in 2D heterostructures can result in a reduction of the rotation symmetry and the generation of quantum phenomena. Although these effects have been demonstrated in transition metal dichalcogenides (TMDs) with mismatched interfaces, the role of band hybridization remains unclear. In addition, the creation of flat bands at the valence band maximum (VBM) of TMDs is still an open challenge.
View Article and Find Full Text PDFACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
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