Electrical junctions are widespread within the mammalian CNS. Yet, their role in organizing neuronal ensemble activity remains incompletely understood. Here, in a functionally well-characterized system - neuroendocrine tuberoinfundibular dopamine (TIDA) neurons - we demonstrate a striking species difference in network behavior: rat TIDA cells discharge in highly stereotyped, robust, synchronized slow oscillations, whereas mouse oscillations are faster, flexible and show substantial cell-to-cell variability. We show that these distinct operational modes are explained by the presence of strong TIDA-TIDA gap junction coupling in the rat, and its complete absence in the mouse. Both species, however, encompass a similar heterogeneous range of intrinsic resonance frequencies, suggesting similar network building blocks. We demonstrate that gap junctions select and impose the slow network rhythm. These data identify a role for electrical junctions in determining oscillation frequency and show how related species can rely on distinct network strategies to accomplish adaptive control of hormone release.
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http://dx.doi.org/10.7554/eLife.33144 | DOI Listing |
J Colloid Interface Sci
January 2025
School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China. Electronic address:
The limited transport of oxygen at the solid-liquid interface and the poor charge separation efficiency of single catalyst significantly impedes the generation of reactive oxygen species (ROS), thereby weakening the application potential of photocatalytic technology in water pollution control. Herein, a hollow porous photocatalytic aerogel sphere (calcium alginate/cellulose nanofibers (CA/CNF)) loaded BiOBr/TiC, combining a favourable mass transfer structure with effective catalytic centers was firstly presented. The floatability and hollow pore structure facilitated rapid O transfer via a triphase interface, thereby promoting the generation of ROS.
View Article and Find Full Text PDFSensors (Basel)
January 2025
School of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China.
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
Power Solutions Group, Onsemi, Scottsdale, AZ 85250, USA.
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of Korea.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q) in the termination structures.
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