AI Article Synopsis
- Researchers created a heterojunction (HJ) using two 2D materials, GeSe and MoS, to explore their combined electrical and photoresponsive properties.
- The study revealed significant rectification with high contrast in vertical tunneling, highlighting the efficiency of charge transport in the HJ.
- The HJ demonstrated strong photoresponse, suggesting potential applications in electronics and optoelectronics due to its multifunctional capabilities.
Article Abstract
Simple stacking of thin van der Waals 2D materials with different physical properties enables one to create heterojunctions (HJs) with novel functionalities and new potential applications. Here, a 2D material p-n HJ of GeSe/MoS is fabricated and its vertical and horizontal carrier transport and photoresponse properties are studied. Substantial rectification with a very high contrast (>10 ) through the potential barrier in the vertical-direction tunneling of HJs is observed. The negative differential transconductance with high peak-to-valley ratio (>10 ) due to the series resistance change of GeSe, MoS , and HJs at different gate voltages is observed. Moreover, strong and broad-band photoresponse via the photoconductive effect are also demonstrated. The explored multifunctional properties of the GeSe/MoS HJs are expected to be important for understanding the carrier transport and photoresponse of 2D-material HJs for achieving their use in various new applications in the electronics and optoelectronics fields.
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| http://dx.doi.org/10.1002/smll.201704559 | DOI Listing |
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