AI Article Synopsis
- The study presents a highly efficient AlGaN-based deep ultraviolet LED that emits light at 270 nm, showing minimal efficiency droop.
- The innovation lies in a custom-designed superlattice p-type electron blocking layer (p-EBL) that boosts hole concentration, improving hole injection into multiple quantum wells.
- Consequently, this design enhances radiative recombination and decreases electron leakage, resulting in a 100% increase in external quantum efficiency for the DUV LED.
Article Abstract
This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5915986 | PMC |
| http://dx.doi.org/10.1186/s11671-018-2539-9 | DOI Listing |
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