Asymmetric resistive switching processes were observed in BaTiO/Nb:SrTiO epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10 ns under - 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO/Nb:SrTiO heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899076 | PMC |
| http://dx.doi.org/10.1186/s11671-018-2513-6 | DOI Listing |
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