AI Article Synopsis
- A centimeter-scale continuous monolayer WS film has been created on oxidized silicon using chemical vapor deposition, featuring monolayer grains over 200 μm in size.
- The film shows both traditional grain boundaries and new structures called grain walls (GWs), which consist of two or three layers and display enhanced fluorescence and photoluminescence due to structural defects.
- Phototransistors made with GWs outperform those made from the monolayer film in terms of photocurrent, indicating potential for engineering WS microstructures for optoelectronic applications.
Article Abstract
Centimeter-scale continuous monolayer WS film with large tensile strain has been successfully grown on oxidized silicon substrate by chemical vapor deposition, in which monolayer grains can be more than 200 μm in size. Monolayer WS grains are observed to merge together via not only traditional grain boundaries but also non-traditional ones, which are named as grain walls (GWs) due to their nanometer-scale widths. The GWs are revealed to consist of two or three layers. Though not a monolayer, the GWs exhibit significantly enhanced fluorescence and photoluminescence. This enhancement may be attributed to abundant structural defects such as stacking faults and partial dislocations in the GWs, which are clearly observable in atomically resolved high resolution transmission electron microscopy and scanning transmission electron microscopy images. Moreover, GW-based phototransistor is found to deliver higher photocurrent than that based on monolayer film. These features of GWs provide a clue to microstructure engineering of monolayer WS for specific applications in (opto)electronics.
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| http://dx.doi.org/10.1088/1361-6528/aabbd7 | DOI Listing |
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