AI Article Synopsis

  • Researchers created the first all-optical Ternary-Content Addressable Memory (T-CAM) cell that can operate at speeds of 10Gb/s, featuring two integrated flip-flops and an optical XOR gate.
  • The two flip-flops store the data bit and the ternary state 'X', while the XOR gate compares these values during operation.
  • Experimental results show that the T-CAM cell works without errors at 10Gb/s for data writing and addressing, suggesting it could enhance all-optical memory architectures for advanced routing uses.

Article Abstract

We experimentally demonstrate the first all-optical Ternary-Content Addressable Memory (T-CAM) cell that operates at 10Gb/s and comprises two monolithically integrated InP Flip-Flops (FF) and a SOA-MZI optical XOR gate. The two FFs are responsible for storing the data bit and the ternary state 'X', respectively, with the XOR gate used for comparing the stored FF-data and the search bit. The experimental results reveal error-free operation at 10Gb/s for both Write and Ternary Content Addressing of the T-CAM cell, indicating that the proposed optical T-CAM cell could in principle lead to all-optical T-CAM-based Address Look-up memory architectures for high-end routing applications.

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http://dx.doi.org/10.1364/OE.26.007555DOI Listing

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Article Synopsis
  • Researchers created the first all-optical Ternary-Content Addressable Memory (T-CAM) cell that can operate at speeds of 10Gb/s, featuring two integrated flip-flops and an optical XOR gate.
  • The two flip-flops store the data bit and the ternary state 'X', while the XOR gate compares these values during operation.
  • Experimental results show that the T-CAM cell works without errors at 10Gb/s for data writing and addressing, suggesting it could enhance all-optical memory architectures for advanced routing uses.
View Article and Find Full Text PDF

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