An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.
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http://dx.doi.org/10.1103/PhysRevLett.120.117703 | DOI Listing |
Adv Mater
January 2025
Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain.
Twisting 2D van der Waals magnets allows the formation and control of different spin-textures, as skyrmions or magnetic domains. Beyond the rotation angle, different spin reversal processes can be engineered by increasing the number of magnetic layers forming the twisted van der Waals heterostructure. Here, pristine monolayers and bilayers of the A-type antiferromagnet CrSBr are considered as building blocks.
View Article and Find Full Text PDFNat Commun
January 2025
School of Physical Science and Technology, Ningbo University, Ningbo, China.
The two-dimensional (2D) "sandwich" structure composed of a cation plane located between two anion planes, such as anion-rich CrI, VS, VSe, and MnSe, possesses exotic magnetic and electronic structural properties and is expected to be a typical base for next-generation microelectronic, magnetic, and spintronic devices. However, only a few 2D anion-rich "sandwich" materials have been experimentally discovered and fabricated, as they are vastly limited by their conventional stoichiometric ratios and structural stability under ambient conditions. Here, we report a 2D anion-rich NaCl crystal with sandwiched structure confined within graphene oxide membranes with positive surface potential.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Max Planck Institute for Microstructure Physics, Halle (Saale), Germany.
Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy MnGe as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Institute of Molecular Science, University of Valencia, Catedratico Jose Beltrán 2, 46980 Paterna, Spain.
The role of self-intercalation in 2D van der Waals materials is key to the understanding of many of their properties. Here we show that the magnetic ordering temperature of thin films of the 2D ferromagnet Fe_{5}GeTe_{2} is substantially increased by self-intercalated Fe that resides in the van der Waals gaps. The epitaxial films were prepared by molecular beam epitaxy and their magnetic properties explored by element-specific x-ray magnetic circular dichroism that showed ferromagnetic ordering up to 375 K.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization, or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity as well as magnetoelectric coupling.
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