We report on two π-conjugated donor-acceptor-donor (D-A-D) molecules of amphiphilic nature, aiming to promote intermolecular ordering and carrier mobility in organic electronic devices. Diketopyrrolopyrrole was selected as the acceptor moiety that was disubstituted with nonpolar and polar functional groups, thereby providing the amphiphilic structures. This structural design resulted in materials with a strong intermolecular order in the solid state, which was confirmed by differential scanning calorimetry and polarized optical microscopy. Langmuir-Blodgett (LB) films of ordered mono- and multilayers were transferred onto glass and silicon substrates, with layer quality, coverage, and intermolecular order controlled by layer compression pressure on the LB trough. Organic field-effect transistors and organic photovoltaics devices with active layers consisting of the amphiphilic conjugated D-A-D-type molecules were constructed to demonstrate that the LB technique is an effective layer-by-layer deposition approach to fabricate self-assembled, ordered thin films.
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http://dx.doi.org/10.1021/acsami.7b18239 | DOI Listing |
Angew Chem Int Ed Engl
January 2025
University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, No. 2006, Xiyuan Avenue, High-tech Zone (West Area), 610054, Chengdu, CHINA.
Bismuth oxide (Bi2O3) emerges as a potent catalyst for converting CO2 to formic acid (HCOOH), leveraging its abundant lattice oxygen and the high activity of its Bi-O bonds. Yet, its durability is usually impeded by the loss of lattice oxygen causing structure alteration and destabilized active bonds. Herein, we report an innovative approach via the interstitial incorporation of indium (In) into the Bi2O3, significantly enhancing bond stability and preserving lattice oxygen.
View Article and Find Full Text PDFSci Technol Adv Mater
January 2025
Magnetic Functional Device Group, Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS), Tsukuba, Japan.
We demonstrate high-throughput evaluation of the half-metallicity of CoMnSi Heusler alloys by spin-integrated hard X-ray photoelectron spectroscopy (HAXPES) of composition-spread films performed with high-brilliance synchrotron radiation at NanoTerasu, which identifies the optimum composition showing the best half-metallicity. Co Mn Si composition-spread thin films for = 10-40% with a thickness of 30 nm are fabricated on MgO(100) substrates using combinatorial sputtering technique. The 2-ordering and (001)-oriented epitaxial growth of CoMnSi are confirmed by X-ray diffraction for = 18-40%.
View Article and Find Full Text PDFNPJ 2D Mater Appl
January 2025
School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin, Ireland.
Thin films fabricated from solution-processed graphene nanosheets are of considerable technological interest for a wide variety of applications, such as transparent conductors, supercapacitors, and memristors. However, very thin printed films tend to have low conductivity compared to thicker ones. In this work, we demonstrate a simple layer-by-layer deposition method which yields thin films of highly-aligned, electrochemically-exfoliated graphene which have low roughness and nanometer-scale thickness control.
View Article and Find Full Text PDFSmall
January 2025
School of Energy and Power Engineering, Beihang University, Beijing, 100191, China.
The manufacturing of thin films through selective laser sintering of micro/nanoparticles is an emerging technology that has been developing rapidly over the last two decades owing to its digitization, efficiency, and good adaptability to various materials. However, high-quality laser sintering of different materials remains a challenge: ceramic particles are difficult to be sintered due to low absorbance; metallic particles are prone to oxidation; semiconductor particles are difficult to process for performance enhancement due to high stress. In this work, a new approach is proposed that employs an additional Indium Tin Oxide (ITO) sacrificial layer to assist laser sintering of different functional materials, which detaches after sintering without contaminating the target material.
View Article and Find Full Text PDFAdv Mater
January 2025
The Institute of Flexible Electronics (IFE Future Technologies), Xiamen University, 422 Siming South Road, Xiamen, 361005, China.
Complex internal stresses that appear in flexible thin-film electronic devices under long-term deformation operation are associated with incompatible mechanical properties of the multiple layers, which potentially cause intralayer fracture and separation. These defects may result in device instability, performance loss, and failure. Herein, a thermoplastic functional strategy is proposed for manufacturing high-performance stretchable semiconducting polymers with excellent strain-tolerance capacities for flexible electronic devices.
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