Photoluminescence measurements in mono- and bilayer-MoS on SiO were undertaken to determine the thermal effect of the MoS/SiO interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS were lower and weaker than those from bilayer MoS at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5876333PMC
http://dx.doi.org/10.1038/s41598-018-23788-3DOI Listing

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