Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.
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http://dx.doi.org/10.1038/s41467-018-03218-8 | DOI Listing |
J Chem Phys
January 2025
Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620990 Yekaterinburg, Russia.
The crystal and electronic structure of ZrxTi1-xSe2 (0 < x < 1) compounds and their electrical resistivity have been studied in detail for the first time. A combination of soft x-ray spectroscopic methods (XPS, XAS, and ResPES) was used to investigate the electronic structure. The lattice parameters as a function of the metal concentration x obey Vegard's law.
View Article and Find Full Text PDFSmall
January 2025
Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L3G1, Canada.
Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated lattices, or by generating heavy band folding with avoided band crossing in Moiré superlattices. Here a general approach is proposed to introduce flat bands into widely studied transition metal dichalcogenide (TMD) materials by dilute intercalation.
View Article and Find Full Text PDFActa Biomater
January 2025
Institute of Environmental Research at Greater Bay Area, Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou 510006, China; School of Public Health, Tianjin Medical University, Tianjin 300070, China. Electronic address:
For biomedical applications, two-dimensional transition metal dichalcogenides (2D TMDCs) are often combined with other elements or functionalized with specific surface ligands, while their intrinsic biological activities are not yet fully understood. This study investigates the anti-inflammatory potential of four unmodified 2D TMDCs, including WS, WSe, NbS, and NbSe nanosheets, in LPS-activated MH-S cells in vitro and in a mouse model of pulmonary inflammation in vivo. Despite their varying compositions, these 2D TMDCs exhibited comparable anti-inflammatory effects in LPS-activated MH-S cells.
View Article and Find Full Text PDFNano Lett
January 2025
School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, International Joint Laboratory of Low-carbon Chemical Engineering of Ministry of Education, Tianjin University, Tianjin 300072, P. R. China.
Molybdenum disulfide (MoS) is a promising anode for sodium-ion batteries (SIBs) due to its high theoretical capacity and layered structure. However, a poor reversible conversion reaction and a low initial Coulombic efficiency (ICE) limit its practical application. This study systematically investigated the potential of pre-intercalated sodium ions molybdenum disulfide (Na-MoS) as an anode material for SIBs.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
High-Power Converter Systems (HLU), Technical University of Munich (TUM), 80333 Munich, Germany.
Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) as a means to circumvent oxide-related instabilities. The nanodevice is computationally assessed using a quantum simulation approach based on the self-consistent solutions of the Poisson equation and the quantum transport equation under the ballistic transport regime.
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