An In₂O₃/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In₂O₃/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In₂O₃ films increased with the increase in annealing time. The thermoelectric voltage of the In₂O₃/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In₂O₃/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5948799 | PMC |
| http://dx.doi.org/10.3390/s18040958 | DOI Listing |
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