Temperature-Induced Topological Phase Transition in HgTe Quantum Wells.

Phys Rev Lett

Laboratoire Charles Coulomb, UMR 5221 Centre National de la Recherche Scientifique, University of Montpellier, F-34095 Montpellier, France.

Published: February 2018

We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures, and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electronlike and holelike subbands. Their crossing at a critical magnetic field B_{c} is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of B_{c}, we directly extract the critical temperature T_{c} at which the bulk band gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.120.086401DOI Listing

Publication Analysis

Top Keywords

topological phase
12
phase transition
12
temperature-induced topological
8
hgte quantum
8
quantum well
8
landau levels
8
critical temperature
8
transition hgte
4
quantum wells
4
wells report
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!