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A lot of research, mostly using electron-injection layers (EILs) composed of alkali-metal compounds has been reported with a view to increase the efficiency of solution-processed organic light-emitting devices (OLEDs). However, these materials have intractable properties, such as a strong affinity for moisture, which cause the degradation of OLEDs. Consequently, optimal EIL materials should exhibit high electron-injection efficiency as well as be stable in air. In this study, polymer light-emitting devices (PLEDs) based on the commonly used yellow-fluorescence-emitting polymer F8BT, which utilize poly(diallyldimethylammonium)-based polymeric ionic liquids, are experimentally and analytically investigated. As a result, the optimized PLED employing an EIL comprising poly(diallyldimethylammonium) bis(trifluoromethanesulfonyl)imide (poly(DDA)TFSI), which is expected to display good moisture resistance because of water repellency of fluorocarbon groups, exhibits excellent storage stability in air and electroluminescence performance with a low turn-on voltage of 2.01 V, maximum external quantum efficiency of 9.00%, current efficiency of 30.1 cd A , and power efficiency of 32.4 lm W . The devices with poly(DDA)TFSI show one of the highest efficiencies as compared to the reported standard PLEDs. Moreover, poly(DDA)TFSI is applied as a hole-injection layer (HIL). The optimized PLED using poly(DDA)TFSI as the HIL exhibits performances comparable to those of a device that uses a conventional poly(3,4-ethylenedioxy-thiophene):poly(4-styrenesulfonate) HIL.
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http://dx.doi.org/10.1002/adma.201705915 | DOI Listing |
Nanoscale Adv
December 2024
Institute of Science and Technology, TNU-University of Sciences Thai Nguyen Vietnam
This article studies the synthesis, as well as the structural, vibrational, and optical properties of Eu-doped ZnO quantum dots (QDs) and investigates the energy transfer mechanism from the ZnO host to Eu ions using Reisfeld's approximation. Eu-doped ZnO QDs at varying concentrations (0-7%) were successfully prepared using a wet chemical method. The successful doping of Eu ions into the ZnO host lattice, as well as the composition and valence states of the elements present in the sample, were confirmed through X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses.
View Article and Find Full Text PDFAdv Mater
December 2024
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China.
Monolayer transition metal dichalcogenides (TMDs) with strong exciton effects have enabled diverse light emitting devices, however, their Ångstrom thickness makes it challenging to efficiently manipulate exciton emission by themselves. Although their nanostructured multi-layer counterparts can effectively manipulate optical field at deep subwavelength thickness scale, these indirect band gap multi-layer TMDs are lack of strong luminescence, hindering their applications in light emitting devices. Here, the integration of monolayer TMDs is presented with nanostructured multi-layer TMDs, combining both strong exciton emission and optical manipulation in a single ultra-thin platform.
View Article and Find Full Text PDFNanotechnology
December 2024
Huazhong University of Science and Technology School of Energy and Power Engineering, Clean Energy Building, Wuhan, 430074, CHINA.
Quantum dots (QDs) have shown great application potential in a variety of optoelectronic devices due to their unique optoelectronic properties, especially playing a key role in the development of quantum dot converted light-emitting diodes (QD-LEDs). Inorganic ligands, including metal chalcogenides, oxoanions, halides, pseudohalides, and metal cations, play crucial roles in the synthesis, stabilization, and functionalization of QDs. Compared to long-chain organic ligands, inorganic ligands are shorter and possess higher electron mobility, which facilitates their application in high-performance QD-LEDs.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
The limited operational lifetime of quantum-dot light-emitting diodes (QLEDs) poses a critical obstacle that must be addressed before their practical application. Specifically, cadmium-free InP-based QLEDs, which are environmentally benign, experience significant operational degradation due to challenges in charge-carrier confinement stemming from the composition of InP quantum dots (QDs). This study investigates the operational degradation of InP QLEDs and provides direct evidence of the degradation process.
View Article and Find Full Text PDFNanotechnology
December 2024
College of Nanoscale Science and Engineering, State University of New York at Albany, NFS 234, 215 Fuller Road, Albany, NY 12203, USA, Albany, 12203, UNITED STATES.
GaN is an important semiconductor for energy-efficient light-emitting devices. Hydrogen plays a crucial role in gallium nitride (GaN) growth and processing. It can form electrically neutral complexes with acceptors during growth, which significantly increases the acceptor incorporation.
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