Topological phononic insulators (TPnIs) show promise for application in the manipulation of acoustic waves for the design of low-loss transmission and perfectly integrated communication devices. Since solid phononic crystals exist as a transverse polarization mode and a mixed longitudinal-transverse polarization mode, the realization of topological edge states for both out-of-plane and in-plane bulk elastic waves is desirable to enhance the controllability of the edge waves in solid systems. In this paper, a two-dimensional (2D) solid/solid hexagonal-latticed phononic system that simultaneously supports the topologically protected edge states for out-of-plane and in-plane bulk elastic waves is investigated. Firstly, two pairs of two-fold Dirac cones, respectively corresponding to the out-of-plane and in-plane waves, are obtained at the same frequency by tuning the crystal parameters. Then, a strategy of zone folding is invoked to form double Dirac cones. By shrinking and expanding the steel scatterer, the lattice symmetry is broken, and band inversions induced, giving rise to an intriguing topological phase transition. Finally, the topologically protected edge states for both out-of-plane and in-plane bulk elastic waves, which can be simultaneously located at the frequency range from 1.223 to 1.251 MHz, are numerically observed. Robust pseudospin-dependent elastic edge wave propagation along arbitrary paths is further demonstrated. Our results will significantly broaden its practical application in the engineering field.
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http://dx.doi.org/10.1088/1361-648X/aab22a | DOI Listing |
Phys Chem Chem Phys
January 2025
School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
Heterojunctions (HJs) based on two-dimensional (2D) transition metal dichalcogenides are considered promising candidates for next-generation electronic and optoelectronic devices. Here, vertical (V-type) and lateral (L-type) HJ diodes based on metallic 1T-VSe and semiconducting 2H-WSe with out-of-plane and in-plane contacts are designed. First-principles quantum transport simulations reveal that both V- and L-type VSe/WSe HJ diodes form p-type Schottky contacts.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Institute of Nano Science and Technology, Sector 81, Knowledge City, Manauli, Mohali, Mohali, Punjab, 140306, INDIA.
Two-dimensional (2D) materials hold great promise for the next-generation optoelectronics applications, many of which, including solar cell, rely on the efficient dissociation of exciton into free charge carriers. However, photoexcitation in atomically thin 2D semiconductors typically produces exciton with a binding energy of ~500 meV, an order of magnitude larger than thermal energy at room temperature. This inefficient exciton dissociation can limit the efficiency of photovoltaics.
View Article and Find Full Text PDFACS Nano
January 2025
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, PR China.
The ever-growing interest in MXenes has been driven by their distinct electrical, thermal, mechanical, and optical properties. In this context, further revealing their physicochemical attributes remains the key frontier of MXene materials. Herein, we report the anisotropic localized surface plasmon resonance (LSPR) features in TiCT MXene as well as site-selective photocatalysis enabled by the photophysical anisotropy.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
Nat Commun
January 2025
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top.
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