AI Article Synopsis
- Inorganic semiconductors like III-V materials are crucial for optoelectronic and microelectronic components used in various applications such as energy harvesting and telecommunications.
- A new technique employing fast electron beam lithography has been used to create indium phosphide-based multilayer materials with enhanced waterproofing properties, allowing for better performance in harsh environments.
- The research focuses on predicting and controlling the wettability of these materials, enabling the fabrication of waterproof components without coatings that could impair device functionality.
Article Abstract
Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5824885 | PMC |
| http://dx.doi.org/10.1038/s41598-018-21864-2 | DOI Listing |
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