We report on the large-scale synthesis of polycrystalline multilayer PtSe film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe and Cs-doped FAPbI, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large I/ I ratio of 5.7 × 10, high responsivity of 117.7 mA W, and decent specific detectivity of 2.91 × 10 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe/perovskite heterojunction for future air-stable ultrafast photodetecting applications.
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http://dx.doi.org/10.1021/acs.jpclett.8b00266 | DOI Listing |
Adv Sci (Weinh)
January 2025
Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China.
Unipolar barrier architecture is designed to enhance the photodetector's sensitivity by inducing highly asymmetrical barriers, a higher barrier for blocking majority carriers to depressing dark current, and a low minority carrier barrier without impeding the photocurrent flow through the channel. Depressed dark current without block photocurrent is highly desired for uncooled Long-wave infrared (LWIR) photodetection, which can enhance the sensitivity of the photodetector. Here, an excellent unipolar barrier photodetector based on multi-layer (ML) graphene (G) is developed, WSe, and PtSe (G-WSe-PtSe) van der Waals (vdW) heterostructure, in which extremely low dark current of 1.
View Article and Find Full Text PDFACS Appl Mater Interfaces
June 2024
Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states.
View Article and Find Full Text PDFAdv Mater
April 2024
CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France.
2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC.
View Article and Find Full Text PDFPlasmonics
April 2023
Department of Physics, Tri-Chandra Multiple Campus, Tribhuvan University, Kathmandu, 44600 Nepal.
The sensing performance parameters of the SPR sensors are sensitivity, detection accuracy, the figure of merit (FOM), and full-width half maximum (FWHM), and it has been discussed with refractive indexes of analyte 1.33, 1.35, 1.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2022
College of Physical Science and Technology, Xiamen University, Xiamen361005, China.
Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe devices, it is essential to understand the interfacial thermal properties between PtSe and its substrate.
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