Significantly enhanced visible light response in single TiO nanowire by nitrogen ion implantation.

The metal-oxide semiconductor TiO shows enormous potential in the field of photoelectric detection; however, UV-light absorption only restricts its widespread application. It is considered that nitrogen doping can improve the visible light absorption of TiO, but the effect of traditional chemical doping is far from being used for visible light detection. Herein, we dramatically broadened the absorption spectrum of the TiO nanowire (NW) by nitrogen ion implantation and apply the N-doped single TiO NW to visible light detection for the first time. Moreover, this novel strategy effectively modifies the surface states and thus regulates the height of Schottky barriers at the metal/semiconductor interface, which is crucial to realizing high responsivity and a fast response rate. Under the illumination of a laser with a wavelength of 457 nm, our fabricated photodetector exhibits favorable responsivity (8 A W) and a short response time (0.5 s). These results indicate that ion implantation is a promising method in exploring the visible light detection of TiO.