The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.
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http://dx.doi.org/10.1063/1.5010786 | DOI Listing |
RSC Adv
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams.
View Article and Find Full Text PDFNano Lett
January 2025
Intel Corporation, Technology Research Group, Hillsboro, Oregon 97124, United States.
Intel's efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes as well as production-level process control.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, No. 24 South Section 1, Yihuan Road, 610065 Chengdu, People's Republic of China.
Obtaining effective extreme ultraviolet lithography (EUVL) materials for pragmatic applications remains challenging. The experimental design and conventional theoretical prediction are time-consuming and costly and hardly affordable to accelerate the discovery of commercial EUVL materials. In this work, we employed the machine learning (ML) technique to predict the ionization potential of promising EUVL materials, which is closely related to the photoresists' solubility switch.
View Article and Find Full Text PDFJ Synchrotron Radiat
January 2025
CAEN, Viareggio, Italy.
We provide a technical description and experimental results of the practical development and offline testing of an innovative, closed-loop, adaptive mirror system capable of making rapid, precise and ultra-stable changes in the size and shape of reflected X-ray beams generated at synchrotron light and free-electron laser facilities. The optical surface of a piezoelectric bimorph deformable mirror is continuously monitored at 20 kHz by an array of interferometric sensors. This matrix of height data is autonomously converted into voltage commands that are sent at 1 Hz to the piezo actuators to modify the shape of the mirror optical surface.
View Article and Find Full Text PDFNanophotonics
November 2024
School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
Structured beams carrying orbital angular momentum (OAM) provide powerful capabilities for applications in optical tweezers, super-resolution imaging, quantum optics, and ad-vanced microparticle manipulation. However, it is challenging for generate and control the OAM beams at the extreme ultraviolet (EUV) region due to the lack of suitable wave front shaping optics arise from being limited to the strong absorption of most materials. Here, we use a modified Fermat-spiral photon-sieve splitter to simultaneously generate two focused doughnut beams with opposite helical phase.
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