Tin and its compounds hold promise for the development of high-capacity anode materials that could replace graphitic carbon used in current lithium-ion batteries. However, the introduced porosity in current electrode designs to buffer the volume changes of active materials during cycling does not afford high volumetric performance. Here, we show a strategy leveraging a sulfur sacrificial agent for controlled utility of void space in a tin oxide/graphene composite anode. In a typical synthesis using the capillary drying of graphene hydrogels, sulfur is employed with hard tin oxide nanoparticles inside the contraction hydrogels. The resultant graphene-caged tin oxide delivers an ultrahigh volumetric capacity of 2123 mAh cm together with good cycling stability. Our results suggest not only a conversion-type composite anode that allows for good electrochemical characteristics, but also a general synthetic means to engineering the packing density of graphene nanosheets for high energy storage capabilities in small volumes.
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http://dx.doi.org/10.1038/s41467-017-02808-2 | DOI Listing |
In this work, a specially designed multilayer indium tin oxide (ITO) mesh structure metasurface was proposed as a microwave absorber, achieving both excellent angle-insensitive broadband absorption and high shielding effectiveness (SE). It features gradually changing surface resistance ( ), to expand the absorption bandwidth while maintaining high SE. Also, a folded square ring metasurface was designed to effectively suppress surface wave grating lobes, as well as to reduce the unit size of the metasurface and thus the absorber.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel.
Cuprous oxide (CuO) thin films were chemically deposited from a solution onto GaAs(100) and (111) substrates using a simple three-component solution at near-ambient temperatures (10-60 °C). Interestingly, a similar deposition onto various other substrates including Si(100), Si(111), glass, fluorine-doped tin oxide, InP, and quartz resulted in no film formation. Films deposited on both GaAs(100) and (111) were found alongside substantial etching of the substrates.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India.
The tunability of the energy bandgap in the near-infrared (NIR) range uniquely positions colloidal lead sulfide (PbS) quantum dots (QDs) as a versatile material to enhance the performance of existing perovskite and silicon solar cells in tandem architectures. The desired narrow bandgap (NBG) PbS QDs exhibit polar (111) and nonpolar (100) terminal facets, making effective surface passivation through ligand engineering highly challenging. Despite recent breakthroughs in surface ligand engineering, NBG PbS QDs suffer from uncontrolled agglomeration in solid films, leading to increased energy disorder and trap formation.
View Article and Find Full Text PDFChem Asian J
January 2025
Kyoto University - Uji Campus: Kyoto Daigaku - Uji Campus, Institute for Chemical Research, Gokasho, 611-0011, Uji, JAPAN.
The development of efficient electron-collecting monolayer materials is desired to lower manufacturing costs and improve the performance of regular (negative-intrinsic-positive, n-i-p) type perovskite solar cells (PSCs). Here, we designed and synthesized four electron-collecting monolayer materials based on thiazolidinone skeletons, with different lowest-unoccupied molecular orbital (LUMO) levels (rhodanine or thiazolidinedione) and different anchoring groups to the transparent electrode (phosphonic acid or carboxylic acid). These molecules, when adsorbed on indium tin oxide (ITO) substrates, lower the work function of ITO, decreasing the energy barrier for electron extraction at the ITO/perovskite interface and improving the device performance.
View Article and Find Full Text PDFRSC Adv
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams.
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