(LaSrMnO):(CuO) (LSMO:CuO) nanocomposite thin films were deposited on SrTiO (001), LaAlO (001), and MgO (001) substrates by pulsed laser deposition, and their microstructure as well as magnetic and magnetoresistance properties were investigated. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that LSMO:CuO films grow as highly textured self-assembled vertically aligned nanocomposite (VAN), with a systematic domain structure and strain tuning effect based on the substrate type and laser deposition frequency. A record high low-field magnetoresistance (LFMR) value of ∼80% has been achieved in LSMO:CuO grown on LaAlO (001) substrate under high frequency. Detailed analysis indicates that both the strain state and the phase boundary effect play a significant role in governing the overall LFMR behavior.
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http://dx.doi.org/10.1021/acsami.7b17398 | DOI Listing |
Adv Mater
January 2025
Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa, 252-5258, Japan.
Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two-dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so-called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles θ, such as twisted interfacial Josephson junctions using high-temperature superconductors.
View Article and Find Full Text PDFSci Rep
January 2025
College of Science, Xuchang University, Xuchang, 461000, China.
Spin and valley polarizations (P and P) and tunneling magnetoresistance (TMR) are demonstrated in the ferromagnetic/barrier/normal/barrier/ferromagnetic WSe junction, with the gate voltage and off-resonant circularly polarized light (CPL) applied to the two barrier regions. The minimum incident energy of non-zero spin- and valley-resolved conductance has been derived, which is consistent with numerical calculations and depends on the electric potential U, CPL intensity ΔΩ, exchange field h, and magnetization configuration: parallel (P) or antiparallel (AP). For the P (AP) configuration, the energy region with P = -1 or P = 1 is wider (narrower) and increases with ΔΩ.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Max Planck Institute for Microstructure Physics, Halle (Saale), Germany.
Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy MnGe as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Department of Physics, University of Washington, Seattle, Washington 98195, USA.
We study hydrodynamic thermal transport in high-mobility two-dimensional electron systems placed in an in-plane magnetic field and identify a new mechanism of thermal magnetotransport. This mechanism is caused by drag between the electron populations with opposite spin polarization, which arises in the presence of a hydrodynamic flow of heat. In high mobility systems, spin drag results in strong thermal magnetoresistance, which becomes of the order of 100% at relatively small spin polarization of the electron liquid.
View Article and Find Full Text PDFNat Commun
January 2025
Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
Chirality-induced spin selectivity (CISS) generates giant spin polarization in transport through chiral molecules, paving the way for novel spintronic devices and enantiomer separation. Unlike conventional transport, CISS magnetoresistance (MR) violates Onsager's reciprocal relation, exhibiting significant resistance changes when reversing electrode magnetization at zero bias. However, its underlying mechanism remains unresolved.
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