We experimentally study nanowire-shaped spin-Hall nano-oscillators based on nanometer-thick epitaxial films of Yttrium Iron Garnet grown on top of a layer of Pt. We show that, although these films are characterized by significantly larger magnetic damping in comparison with the films grown directly on Gadolinium Gallium Garnet, they allow one to achieve spin current-driven auto-oscillations at comparable current densities, which can be an indication of the better transparency of the interface to the spin current. These observations suggest a route for improvement of the flexibility of insulator-based spintronic devices and their compatibility with semiconductor technology.
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http://dx.doi.org/10.1038/s41598-018-19606-5 | DOI Listing |
Nat Mater
November 2024
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
ACS Nano
May 2022
Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear.
View Article and Find Full Text PDFPhys Rev Lett
July 2021
Department of Physics, University of Hong Kong, Hong Kong, China.
Scattering immune propagation of light in topological photonic systems may revolutionize the design of integrated photonic circuits for information processing and communications. In optics, various photonic topological circuits have been developed, which were based on classical emulation of either quantum spin Hall effect or quantum valley Hall effect. On the other hand, the combination of both the valley and spin degrees of freedom can lead to a new kind of topological transport phenomenon, dubbed spin-valley Hall effect (SVHE), which can further expand the number of topologically protected edge channels and would be useful for information multiplexing.
View Article and Find Full Text PDFPhys Rev Lett
January 2020
Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
We demonstrate nondecaying, steplike electrical switching of tristate Néel order in Pt/α-Fe_{2}O_{3} bilayers detected by the spin-Hall induced anomalous Hall effect. The as-grown Pt/α-Fe_{2}O_{3} bilayers exhibit sawtooth switching behavior generated by current pulses. After annealing by a high pulse current, the Hall signals reveal single-pulse saturated, nondecaying, steplike switching.
View Article and Find Full Text PDFSci Rep
January 2018
Institute for Applied Physics and Center for Nanotechnology, University of Muenster, Corrensstrasse 2-4, 48149, Muenster, Germany.
We experimentally study nanowire-shaped spin-Hall nano-oscillators based on nanometer-thick epitaxial films of Yttrium Iron Garnet grown on top of a layer of Pt. We show that, although these films are characterized by significantly larger magnetic damping in comparison with the films grown directly on Gadolinium Gallium Garnet, they allow one to achieve spin current-driven auto-oscillations at comparable current densities, which can be an indication of the better transparency of the interface to the spin current. These observations suggest a route for improvement of the flexibility of insulator-based spintronic devices and their compatibility with semiconductor technology.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!