Excitation-energy-dependent emission (EDE) is well known from photoluminescence (PL) studies of polar solvents and carbon-based nanostructures. In polar solvents, this effect known as the 'red edge effect' (REE) is understood to arise from solute-solvent interactions, whereas, in case of carbon-based nanostructures, the origin is highly debated. Understanding this effect has important bearings on the potential applications of these materials. EDE has never been reported from large crystalline materials, except very recently by our group. Here, we make detailed investigations to understand the universality and the mechanism behind the EDE in a wide band gap aluminosilicate (feldspar), which comprises more than half of the Earth's crust, and is widely used in geophotonics (e.g., optical dating). We observe EDE up to 150 nm at room temperature in our samples, which is unprecedented in rigid macroscopic structures. Based on PL investigations at 295 K and 7 K, we present a novel model that is based on photoionisation of a deep lying defect and subsequent transport/relaxation of free electrons in the sub-conduction band tail states. Our model has important implications for potential photonic applications using feldspar, measurement of band tail width in wide bandgap materials, and understanding the EDE effect in other materials.
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http://dx.doi.org/10.1038/s41598-017-17466-z | DOI Listing |
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January 2025
Department of Physics and Materials Science, University of Luxembourg, Esch-sur-Alzette, L-4365, Luxembourg.
Cu(In, Ga)S demonstrates potential as a top cell material for tandem solar cells. However, achieving high efficiencies has been impeded by open-circuit voltage (V) deficits arising from In-rich and Ga-rich composition segregation in the absorber layer. This study presents a significant improvement in the optoelectronic quality of Cu(In, Ga)S films through the mitigation of composition segregation in three-stage co-evaporated films.
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January 2025
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, 710071, China.
(AlO)(HfO) films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO was examined through electrical measurements. The results showed that increasing Al content raised the flat-band voltage, reduced the interface state density (D), and significantly lowered the leakage current at a given voltage.
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December 2024
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a programmable gain amplifier (PGA) and a low-pass filter (LPF). The CCIA includes a DC servo loop (DSL) to eliminate electrode DC offset (EDO) and a ripple rejection loop (RRL) with self-zeroing technology to suppress high-frequency ripples caused by the chopper.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Department of Electrical, Computer and Biomedical Engineering, University of Pavia, 27100 Pavia, Italy.
Voltage reference circuits are a basic building block in most integrated microsystems, covering a wide spectrum of applications. Hence, they constitute a subject of great interest for the entire microelectronics community. MOSFET-based solutions, in particular, have emerged as the implementation of choice for realizing voltage reference circuits, given the supply voltage scaling and the ever-lower power consumption specifications in various applications.
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December 2024
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
As the trajectory of developing advanced electronics is shifting towards wearable electronics, various methods for implementing flexible and bendable devices capable of conforming to curvilinear surfaces have been widely investigated. In particular, achieving high-performance and stable flexible transistors remains a significant technical challenge, as transistors are fundamental components of electronics, playing a key role in overall performance. Among the wide range of candidates for flexible transistors, two-dimensional (2D) molybdenum disulfide (MoS)-based transistors have emerged as potential solutions to address these challenges.
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