The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV centers, targeted to fabricated nanowires. The co-localization of single SiV centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV creation method, enables a new class of devices for integrated photonics and quantum science.
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