The transmission properties of an off-planar integrated circuit including two wavelength division demultiplexers are designed, simulated, and analyzed in detail by the finite-difference time-domain method. The results show that the wavelength selection for different ports (0.404[c/a] at B port, 0.389[c/a] at B port, and 0.394[c/a] at B port) can be realized by adjusting the parameters. It is especially important that the off-planar integration between two complex devices is also realized. These simulated results give valuable promotions in the all-optical integrated circuit, especially in compact integration.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/AO.57.000185 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Integrated artificial neurons from metal halide perovskites.
Mater Horiz
January 2025
Center for Nanophotonics, AMOLF, 1098 XG, Amsterdam, The Netherlands.
Hardware neural networks could perform certain computational tasks orders of magnitude more energy-efficiently than conventional computers. Artificial neurons are a key component of these networks and are currently implemented with electronic circuits based on capacitors and transistors. However, artificial neurons based on memristive devices are a promising alternative, owing to their potentially smaller size and inherent stochasticity.
View Article and Find Full Text PDFA ferroelectrically modulated ultrasensitive two-dimensional perovskite phototransistor with zero-gate-bias.
Nanoscale
January 2025
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710049, China.
Two-dimensional (2D) organic-inorganic halide perovskites are promising sensitive materials for optoelectronic applications due to their strong light-matter interactions, layered structure, long carrier lifetime and diffusion length. However, a high gate bias is indispensable for perovskite-based phototransistors to optimize detection performances, since ion migration seriously screens the gate electric field and the deposition process introduces intrinsic defects, which induces severe leakages and large power dissipation. In this work, an ultrasensitive phototransistor based on the (PEA)SnI perovskite and the Al:HfO ferroelectric layer is meticulously studied, working without an external gate voltage.
View Article and Find Full Text PDFOmnidirectional Wireless Power Transfer for Millimetric Magnetoelectric Biomedical Implants.
IEEE J Solid-State Circuits
November 2024
Department of Electrical and Computer Engineering, Rice University, Houston TX, 77005, USA.
Miniature bioelectronic implants promise revolutionary therapies for cardiovascular and neurological disorders. Wireless power transfer (WPT) is a significant method for miniaturization, eliminating the need for bulky batteries in today's devices. Despite successful demonstrations of millimetric battery-free implants in animal models, the robustness and efficiency of WPT are known to degrade significantly under misalignment incurred by body movements, respiration, heart beating, and limited control of implant orientation during surgery.
View Article and Find Full Text PDFHigh-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors.
Research (Wash D C)
January 2025
School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.
Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact device technology for 2D material channels. Here, we report high-performance edge-contact monolayer molybdenum disulfide (MoS) field-effect transistors (FETs) utilizing well-controlled plasma etching techniques.
View Article and Find Full Text PDFCortical interneurons play an important role in mediating the juvenile critical period for ocular dominance plasticity in the mouse primary visual cortex. Previously, we showed that transplantation of cortical interneurons derived from the medial ganglionic eminence (MGE) opens a robust period of ocular dominance plasticity 33-35 days after transplantation into neonatal host visual cortex. The plasticity can be induced by transplanting either PV or SST MGE-derived cortical interneurons; it requires transplanted interneurons to express the vesicular GABAergic transporter; and it is manifested by changes to the host visual circuit.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!