The ability to encrust in order to secure and maintain growth on a substrate is a key competitive innovation in benthic metazoans. Here we describe the substrate growth dynamics, mode of biomineralization and possible affinity of , a large (up to 1 m), robustly skeletal, and modular Ediacaran metazoan which encrusted the walls of synsedimentary fissures within microbial-metazoan reefs. formed laminar or domal morphologies with an internal structure of open tubules and transverse elements, and had a very plastic, non-deterministic growth form which could encrust both fully lithified surfaces as well as living microbial substrates, the latter via modified skeletal holdfasts. shows complex growth interactions and substrate competition with contemporary living microbialites and thrombolites, including the production of plate-like dissepiments in response to microbial overgrowth which served to elevate soft tissue above the microbial surface. could also recover from partial mortality due to microbial fouling. We infer initial skeletal growth to have propagated via the rapid formation of an organic scaffold via a basal pinacoderm prior to calcification. This is likely an ancient mode of biomineralization with similarities to the living calcified demosponge also shows inferred skeletal growth banding which, combined with its large size, implies notable individual longevity. In sum, was a large, relatively long-lived Ediacaran clonal skeletal metazoan that propagated via an organic scaffold prior to calcification, enabling rapid, effective and dynamic substrate occupation and competition in cryptic reef settings. The open tubular internal structure, highly flexible, non-deterministic skeletal organization, and inferred style of biomineralization of places probable affinity within total-group poriferans.
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http://dx.doi.org/10.1098/rspb.2017.1938 | DOI Listing |
Langmuir
January 2025
Centre for Nano and Soft Matter Sciences, Shivanapura, Dasanapura Hobli, Bangalore 562162, India.
The textile industry is one of the main industries that benefited from the industrial revolution. Therefore, discharging of dyes from textile, paper, plastic, and rubber industries is inevitable. This colored wastewater prevents sunlight penetration and highly affects water sources.
View Article and Find Full Text PDFInt J Legal Med
January 2025
University of Alicante, Department of Environmental Sciences and Natural Resources, PO Box 99, Alicante, E-03080, Spain.
The range of the oriental latrine fly (Chrysomya megacephala) is currently expanding. It coexists with another blowfly with a similar ecology, the green bottle fly (Lucilia sericata), one of the most abundant species in carrion during warm months. It is essential to understand the influence of temperature, larval substrate type, and larval competition on the development rates of these necrophagous calliphorids to evaluate the role and the adaptation of C.
View Article and Find Full Text PDFJ Bacteriol
January 2025
Department of Population Medicine and Diagnostic Sciences, Cornell University, Ithaca, New York, USA.
and are two phylogenetically related bacterial pathogens that exhibit extreme intrinsic resistance when they enter into a dormancy-like state. This enables both pathogens to survive extended periods in growth-limited environments. Survival is dependent upon their ability to undergo developmental transitions into two phenotypically distinct variants, one specialized for intracellular replication and another for prolonged survival in the environment and host.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFAdv Mater
January 2025
School of Engineering, Westlake University, Hangzhou, 310030, China.
The epitaxial growth of molybdenum disulfide (MoS₂) on sapphire substrates enables the formation of single-crystalline monolayer MoS₂ with exceptional material properties on a wafer scale. Despite this achievement, the underlying growth mechanisms remain a subject of debate. The epitaxial interface is critical for understanding these mechanisms, yet its exact atomic configuration has previously been unclear.
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