The two-dimensional transition-metal dichalcogenide semiconductor MoS has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS, however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS flake so that electron charges might be transferred from MoS to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS. Such charge depletion lowered the MoS Fermi level, which makes hole conduction favorable in MoS when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS flake.
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