AI Article Synopsis
- The study investigates how the interaction between the top and bottom electronic states in BiSe thin films varies with thickness and affects their transport and optical properties.
- Key findings show that within a certain thickness, the coupling interaction increases from the surface to the inner layers but decreases overall as thickness grows; notably, films with 3 quintuple layers (QLs) demonstrate stronger interactions compared to those with 2 QLs.
- This coupling also leads to variations in transport resistance and optical characteristics, including both red and blue shifts in the dielectric function, which align with recent experimental data and provide new predictions.
Article Abstract
Coupling interaction between the bottom and top surface electronic states and the influence on transport and optical properties of BiSe thin films with 1-8 quintuple layers (QLs) have been investigated by first principles calculations. Obvious spatial and thickness dependences of coupling interaction are found by analyzing hybridization of two surface states. In the thin film with a certain thickness, from the outer to inner atomic layers, the coupling interaction exhibits an increasing trend. On the other hand, as thickness increases, the coupling interaction shows a disproportionate decrease trend. Moreover, the system with 3 QLs exhibits stronger interaction than that with 2 QLs. The presence of coupling interaction would suppress destructive interference of surface states and enhance resistance in various degrees. In view of the inversely proportional relation to transport channel width, the resistance of thin films should show disproportionate thickness dependence. This prediction is qualitatively consistent with the transport measurements at low temperature. Furthermore, the optical properties also exhibit obvious thickness dependence. Especially as the thickness increases, the coupling interaction results in red and blue shifts of the multiple-peak structures in low and high energy regions of imaginary dielectric function, respectively. The red shift trend is in agreement with the recent experimental observation and the blue shift is firstly predicted by the present calculation. The present results give a concrete understanding of transport and optical properties in devices based on BiSe thin films with few QLs.
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| http://dx.doi.org/10.1088/1361-648X/aaa476 | DOI Listing |
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