Black silicon (bSi) wafers with a high density of high-aspect ratio nanopillars have recently been suggested to have mechanical bactericidal activity. However, it remains unclear whether bSi with the nanopillars can kill only growing bacterial cells or also dormant spores that are harder to kill. We have reexamined the cidal activity of bSi on growing cells, dormant and germinated spores of B. subtilis, and dormant spores of several other Bacillus species by incubation on bSi wafers with and without nanopillars. We found that the bSi wafers with nanopillars were indeed very effective in rupturing and killing the growing bacterial cells, while wafers without nanopillars had no bactericidal effect. However, bSi wafers with or without nanopillars gave no killing or rupture of dormant spores of B. subtilis, Bacillus cereus or Bacillus megaterium, although germinated B. subtilis spores were rapidly killed. This work lays a foundation for novel bactericidal applications of bSi by elucidating the limits of mechanical bactericidal approaches.
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http://dx.doi.org/10.1038/s41598-017-18125-z | DOI Listing |
Nanoscale
March 2023
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798.
Black-Si (b-Si) providing broadband light antireflection has become a versatile substrate for photodetectors, photo-electric catalysis, sensors, and photovoltaic devices. However, the conventional fabrication methods suffer from single morphology, low yield, or frangibility. In this work, we present a high-yield CMOS-compatible technique to produce 6-inch wafer-scale b-Si with diverse random nanostructures.
View Article and Find Full Text PDFHeliyon
August 2022
School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia.
This work investigates properties of PEDOT:PSS on flexible black silicon (bSi) for a hybrid solar cell on textured polyimide (PI) substrate. The flexible bSi is formed by thinning down crystalline silicon (cSi) wafers to 65 μm thickness, followed by fabrication of bSi nanowires (NWs) on the wafer surface using one-step metal-catalyzed electroless etching (MCEE) technique. The resulting bSi NWs exhibit an average diameter of around 90-100 nm and length of 900 nm.
View Article and Find Full Text PDFNanomaterials (Basel)
February 2022
Department of Chemical Engineering, R&D Center for Membrane Technology, Center for Circular Economy, Chung Yuan Christian University, 200 Chung Pei Road, Chung Li District, Taoyuan City 32023, Taiwan.
Silicon is a promising anode material for high-performance Li-ion batteries as a result of its high theoretical specific capacity and elemental abundance. Currently, the commercial application of the Si-based anode is still restricted by its large volume changes during the lithiation cycles and low electrical conductivity. To address these issues, we demonstrate a facile plasma-assisted discharge process to anchor nano-sized Si particles into methanol with quick quenching.
View Article and Find Full Text PDFSensors (Basel)
July 2020
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to replace current chip on board (COB) packages. In this paper, a WLCSP with the size of 5.82 mm × 5.
View Article and Find Full Text PDFNanoscale
July 2020
Energy Research Unit, School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata - 700 032, India.
Photovoltaic performance of solar cells automatically improves when the absorber layer itself simultaneously acts as the anti-reflection nanostructure with an enhanced active absorber area on the front surface. Combined physical and chemical etching of p-c-Si wafers by (Ar + H2) plasma in inductively coupled low-pressure plasma CVD produces various nanostructures with subsequent minimization of reflectance. At a reduced temperature, the rate constant of thermal diffusion of atomic-H in the Si-network becomes smaller, leading to enhanced chemical etching reactions that further increase at an elevated RF power.
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