Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al₂O₃ Sensing Film.

The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al₂O₃ as the sensing film have been investigated. The Al₂O₃ sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours, such as sensitivity, hysteresis, and long-term stability, are electrically evaluated under various measurement conditions. Physical analysis is also performed to characterize the surface conditions of the UVO-treated sensing films using X-ray photoelectron spectroscopy and atomic force microscopy. It is found that UVO treatment effectively reduces the buried sites in the Al₂O₃ sensing film and subsequently results in reduced hysteresis and improved long-term stability of EGFET. Meanwhile, the observed slightly smoother Al₂O₃ film surface post UVO treatment corresponds to decreased surface sites and slightly reduced pH sensitivity of the Al₂O₃ film. The sensitivity degradation is found to be monotonically correlated with the UVO treatment time. A treatment time of 10 min is found to yield an excellent performance trade-off: clearly improved long-term stability and reduced hysteresis at the cost of negligible sensitivity reduction. These results suggest that UVO treatment is a simple and facile method to improve the overall sensing performance of the EGFETs with an Al₂O₃ sensing film.