Nanostructured metal catalysts to convert CO to formate, which have been extensively studied over decades, have many problems such as durability, lifetime, high process temperature, and difficulty in controlling the morphology of nanostructures. Here, we report a facile method to fabricate monolithic nanoporous In-Sn alloy, a network of nanopores, induced by electroreduction of indium tin oxide nanobranches (ITO BRs). The electroreduction process concentrated a local electric field at the tip of the nanostructure, leading to current-assisted joule-heating to form a nanoporous In-Sn alloy. Scanning electron microscopy images showed that the nanopore size of In-Sn alloy could be controlled from 1176 to 65 nm by tuning the electroreduction condition: the applied potential and the time. As a result, formate Faradaic efficiency could be improved from 42.4% to 78.6%. Also, current density was increased from -6.6 to -9.6 mA/cm at -1.2 V, thereby resulting in the highest HCOO production rate of 75.9 μmol/(h cm). Detachment of catalysts from the substrate was not observed even after a long-term (12 h) electrochemical measurement at high potential (-1.2 V). This work provides a design rule to fabricate highly efficient and stable oxide-derived electrocatalysts.
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http://dx.doi.org/10.1021/acsami.7b10308 | DOI Listing |
Materials (Basel)
October 2024
Engineering State Key Laboratory of Polymer Materials Engineering, College of Polymer Science, Sichuan University, Chengdu 610500, China.
Phase change materials (PCMs) offer promising solutions for efficient thermal management in electronic devices, energy storage systems, and renewable energy applications due to their capacity to store and release significant thermal energy during phase transitions. This study investigates the thermal and physical properties of Bi-In-Sn/WO composites, specifically for their use as phase change thermal interface materials (PCM-TIMs). The Bi-In-Sn/WO composite was synthesized through mechanochemical grinding, which enabled the uniform dispersion of WO particles within the Bi-In-Sn alloy matrix.
View Article and Find Full Text PDFNat Commun
October 2024
Institute of Physics (IA), RWTH Aachen University, 52056, Aachen, Germany.
Materials (Basel)
September 2024
Nihon Superior Centre for the Manufacture of Electronic Materials, School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia.
Sn-Bi-based, low-temperature solder alloys are being developed to offer the electronics manufacturing industry a path to lower temperature processes. A critical challenge is the significant microstructural and lattice parameter changes that these alloys undergo at typical service temperatures, largely due to the variable solubility of Bi during the Sn phase. The influence of alloying additions in improving the performance of these alloys is the subject of much research.
View Article and Find Full Text PDFMaterials (Basel)
September 2024
Department of Chemistry and Surface Science Western, University of Western Ontario, London, ON N6A 5B7, Canada.
Sn-10Bi low-bismuth-content solder alloy provides a potential alternative to the currently used Sn-Ag-Cu series due to its lower cost, excellent ductility, and strengthening resulting from the Bi solid solution and precipitation. This study primarily investigates the interfacial evolution and shear strength characteristics of Sn-10Bi joints on a Ni/Au surface finish during the as-soldered and subsequent isothermal aging processes. To improve the joint performance, a 0.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
November 2024
MacDiarmid Institute for Advanced Materials and Nanotechnology and Department of Physics, University of Auckland, Private Bag, 92019, Auckland, New Zealand.
The low-temperature liquid metals Ga-In and Ga-Sn have previously showcased >95 % selectivity towards the electrochemical reduction of CO to formate, occuring only when the alloys are melted, not solid. Here, density functional theory molecular dynamics and metadynamics simulations reveal that CO does not directly adsorb to the Ga-alloy surface, but instead is reduced indirectly by reaction with an adsorbed hydrogen. The reaction barrier is vastly more favourable when this process occurs at In or Sn sites (average: 0.
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