Ultrafast pulse generation was demonstrated in a thulium-doped fiber laser mode-locked by magnetron-sputtering deposited WTe with a modulation depth, a nonsaturable loss, and a saturable intensity of 31%, 34.3%, and 7.6 MW/cm, respectively. Stable soliton pulses could be obtained at a 1915.5 nm central wavelength with a pulse duration of 1.25 ps, an average output power of 39.9 mW, and a signal-to-noise ratio of 95 dB. To the best of our knowledge, this was the first demonstration of WTe-based saturable absorbers in fiber lasers at a 2 μm regime.
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http://dx.doi.org/10.1364/OL.42.005010 | DOI Listing |
Nanomaterials (Basel)
December 2024
Department No. 78 Physical and Technical Problems of Metrology, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, Russia.
Monodisperse films of spherical tantalum oxide (V) nanoclusters and spherical tantalum nanoclusters with a tantalum oxide shell with diameters of 1.4-8 nm were obtained by magnetron sputtering. The size of the deposited nanoclusters was controlled using a quadrupole mass filter.
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January 2025
Technical and Macromolecular Chemistry, Paderborn University, Warburger Str. 100, 33098, Paderborn, Germany.
Self-assembled DNA origami lattices on silicon oxide surfaces have great potential to serve as masks in molecular lithography. However, silicon oxide surfaces come in many different forms and the type and history of the silicon oxide has a large effect on its physicochemical surface properties. Therefore, we here investigate DNA origami lattice formation on differently fabricated SiO films on silicon wafers after wet-chemical oxidation by RCA1.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Integrated Circuit, Southeast University, Nanjing 210096, China.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique.
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November 2024
School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China.
Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
In recent years, the fabrication of materials with large nonlinear optical coefficients and the investigation of methods to enhance nonlinear optical performance have been in the spotlight. Herein, the bismuth telluride (BiTe) thin films were prepared by radio-frequency magnetron sputtering and annealed in vacuum at various temperatures. The structural and optical properties were characterized and analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and UV/VIS/NIR spectrophotometry.
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