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Evidence for a topological excitonic insulator in InAs/GaSb bilayers. | LitMetric

Evidence for a topological excitonic insulator in InAs/GaSb bilayers.

Nat Commun

Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.

Published: December 2017

AI Article Synopsis

  • Electron-hole pairing in a dilute semimetal can lead to an excitonic insulator state, creating a gap at the Fermi surface similar to BCS superconductivity.
  • Research on an InAs/GaSb quantum-well system shows compelling optical and electronic evidence of this gap formation at low temperatures and low electron-hole densities.
  • Findings include terahertz transmission spectra that match BCS gap predictions and electronic transport measurements revealing a 2 meV gap with quantized edge conductance, indicating a topological excitonic insulator phase.

Article Abstract

Electron-hole pairing can occur in a dilute semimetal, transforming the system into an excitonic insulator state in which a gap spontaneously appears at the Fermi surface, analogous to a Bardeen-Cooper-Schrieffer (BCS) superconductor. Here, we report optical spectroscopic and electronic transport evidence for the formation of an excitonic insulator gap in an inverted InAs/GaSb quantum-well system at low temperatures and low electron-hole densities. Terahertz transmission spectra exhibit two absorption lines that are quantitatively consistent with predictions from the pair-breaking excitation dispersion calculated based on the BCS gap equation. Low-temperature electronic transport measurements reveal a gap of ~2 meV (or ~25 K) with a critical temperature of ~10 K in the bulk, together with quantized edge conductance, suggesting the occurrence of a topological excitonic insulator phase.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5719361PMC
http://dx.doi.org/10.1038/s41467-017-01988-1DOI Listing

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