Lithium-sulfur batteries are widely seen as a promising next-generation energy-storage system owing to their ultrahigh energy density. Although extensive research efforts have tackled poor cycling performance and self-discharge, battery stability has been improved at the expense of energy density. We have developed an interlayer consisting of two-layer chemical vapor deposition (CVD)-grown graphene supported by a conventional polypropylene (PP) separator. Unlike interlayers made of discrete nano-/microstructures that increase the thickness and weight of the separator, the CVD-graphene is an intact film with an area of 5 × 60 cm and has a thickness of ∼0.6 nm and areal density of ∼0.15 μg cm, which are negligible to those of the PP separator. The CVD-graphene on PP separator is the thinnest and lightest interlayer to date and is able to suppress the shuttling of polysulfides and enhance the utilization of sulfur, leading to concurrently improved specific capacity, rate capability, and cycle stability and suppressed self-discharge when assembled with cathodes consisting of different sulfur/carbon composites and electrolytes either with or without LiNO additive.
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http://dx.doi.org/10.1021/acsami.7b14195 | DOI Listing |
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January 2025
MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Advanced Materials and Mesoscopic Physics, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, P. R. China.
Owing to the nanoscale thickness, excellent mechanical and chemical stabilities, 2D materials including graphene and hexagonal boron nitride have emerged as promising artificial solid electrolyte interphase (SEI) candidates for lithium metal batteries. However, whether the implementation of 2D materials is beneficial to electrochemical performance remains controversial, and the key to confining the electroplated Li beneath the 2D materials remains elusive. Here, a nanocrystalline graphene (NG) film is synthesized on high-carbon Cu and the Li plating/stripping behavior on Cu grown with different 2D materials is investigated.
View Article and Find Full Text PDFACS Appl Nano Mater
December 2024
Department of Chemistry, Virginia Tech, Blacksburg, Virginia 24061, United States.
The transfer of large-area, continuous, chemical vapor deposition (CVD)-grown graphene without introducing defects remains a challenge for fabricating graphene-based electronics. Polymer thin films are commonly used as supports for transferring graphene, but they typically require thermal annealing before transfer. However, little work has been done to thoroughly investigate how thermal annealing affects the polymer/graphene thin film when directly annealed on the growth substrate.
View Article and Find Full Text PDFSmall
December 2024
School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Himachal Pradesh, 175075, India.
The interfacial adhesion between transition metal dichalcogenides (TMDs) and the growth substrate significantly influences the employment of flakes in various applications. Most previous studies have focused on MoS and graphene, particularly their interaction with SiO/Si substrates. In this work, the adhesion strength of CVD-grown bilayer WS is directly measured using the nano scratch technique on three different substrates-Sapphire, SiO/Si, and fused quartz.
View Article and Find Full Text PDFACS Omega
December 2024
Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece.
In this work, we present a comprehensive protocol for achieving hole doping in graphene through exposure to nitric acid (HNO) vapors. We demonstrate gradual p-type surface doping of CVD-grown graphene on a Si/SiO substrate by thermally depositing nitric acid molecules to form self-assembled charge transfer complexes. Detailed analysis of charge carrier concentration and Fermi energy shifts was conducted using Raman, X-ray and ultraviolet photoelectron spectroscopies (XPS/UPS).
View Article and Find Full Text PDFNanotechnology
December 2024
Universidad de Chile, Blanco Encalada 2008, Santiago de Chile, 1025000, CHILE.
Graphene has garnered significant interest in optoelectronics due to its unique properties, including broad wavelength absorption and high mobility. However, its weak stability in ambient conditions requires encapsulation for practical applications. In this study, we investigate graphene CVD-grown field-effect transistors fabricated on Si/SiOwafers, encapsulated with aluminum oxide (AlO) of different thicknesses.
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