To achieve high packing density in on-chip photonic integrated circuits, subwavelength scale nanolasers that can operate without crosstalk are essential components. Metallo-dielectric nanolasers are especially suited for this type of dense integration due to their lower Joule loss and nanoscale dimensions. Although coupling between optical cavities when placed in proximity to one another has been widely reported, whether the phenomenon is induced for metal-clad cavities has not been investigated thus far. We demonstrate coupling between two metallo-dielectric nanolasers by reducing the separation between the two cavities. A split in the resonant wavelength and quality factor is observed, caused by the creation of bonding and anti-bonding supermodes. To preserve the independence of the two closely spaced cavities, the resonance of one of the cavities is detuned relative to the other, thereby preventing coupling.
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| http://dx.doi.org/10.1364/OL.42.004760 | DOI Listing |
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- Researchers have developed bridge-coupled metallo-dielectric nanolasers that can function in both in-phase and out-of-phase modes at room temperature.
- By adjusting the length of the bridge connecting the nanolasers, they can stabilize either mode through varied coupling coefficients.
- This work marks the first instance of mode selection in these types of nanolasers, which could be useful for technologies like imaging, virtual reality, and lidar systems.
To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time.
View Article and Find Full Text PDFTo achieve high packing density in on-chip photonic integrated circuits, subwavelength scale nanolasers that can operate without crosstalk are essential components. Metallo-dielectric nanolasers are especially suited for this type of dense integration due to their lower Joule loss and nanoscale dimensions. Although coupling between optical cavities when placed in proximity to one another has been widely reported, whether the phenomenon is induced for metal-clad cavities has not been investigated thus far.
View Article and Find Full Text PDFAlthough multi quantum well (MQW) structure is frequently suggested as the appropriate medium for providing optical gain in nanolasers with low threshold current, we demonstrate that in general bulk gain medium can be a better choice. We show that the high threshold gain required for nanolasers demands high threshold carrier concentrations and therefore a highly degenerate condition in which the barriers between the quantum wells are heavily pumped. As a result, there occurs spontaneous emission from the barrier in very dissipative low Q modes or undesired confined higher Q modes with resonance wavelengths close to the barrier bandgap.
View Article and Find Full Text PDFSilicon nanophotonic devices for chip-scale optical communication applications [Invited].
Appl Opt
February 2013
ECE Department, University of California San Diego, La Jolla, California 92037, USA.
This paper reviews recent work in the area of silicon photonic devices and circuits for monolithic and heterogeneous integration of circuits and systems on a chip. In this context, it presents fabrication results for producing low-loss silicon waveguides without etching. Resonators and add-drop distributed filters utilizing sidewall modulation fabricated in a single lithography and etching step are demonstrated.
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