Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.
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http://dx.doi.org/10.1021/acs.nanolett.7b03220 | DOI Listing |
Light Sci Appl
January 2025
Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany.
High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom, ranging, and molecular sensing. Integrated photonics, however, is usually considered not suitable for high-power applications mainly due to its small size which limits the energy storage capacity and, therefore, the output power. In the late 90s, to improve the beam quality and increase the stored energy, large-mode-area (LMA) fibers were introduced in which the optical mode area is substantially large.
View Article and Find Full Text PDFNature
January 2025
imec, Leuven, Belgium.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.
View Article and Find Full Text PDFACS Omega
December 2024
Faculty UnB Planaltina, Materials Science Postgraduate Program, University of Brasília, Brasília, Federal District 73345-010, Brazil.
Two-dimensional (2D) silicon-based materials have garnered significant attention for their promising properties, making them suitable for various advanced technological applications. Here, we present Irida-Silicene (ISi), a novel 2D silicon allotrope inspired by Irida-Graphene (IG), which was recently proposed and is entirely composed of carbon atoms. ISi exhibits a buckled structure composed of 3-6-8 membered rings, unlike its planar carbon counterpart.
View Article and Find Full Text PDFNat Commun
December 2024
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, China.
Reservoir computing (RC) is a powerful machine learning algorithm for information processing. Despite numerous optical implementations, its speed and scalability remain limited by the need to establish recurrent connections and achieve efficient optical nonlinearities. This work proposes a streamlined photonic RC design based on a new paradigm, called next-generation RC, which overcomes these limitations.
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