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The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO, TiO and GeSbTe (GST) films, and demonstrate direct measurements of temperature profiles in lateral PCM devices. Our measurements reveal that electrical and thermal interfaces dominate the operation of such devices, uncovering a thermal boundary resistance of 28 ± 8 mK/GW at GST-SiO interfaces and an effective thermopower 350 ± 50 µV/K at GST-Pt interfaces. We also discuss possible pathways to apply Raman thermometry and SThM techniques to nanoscale and vertical resistive memory devices.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5681698 | PMC |
| http://dx.doi.org/10.1038/s41598-017-14498-3 | DOI Listing |
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