The direct formation of CN and CO bonds from inert gases is essential for chemical/biological processes and energy storage systems. However, its application to carbon nanomaterials for improved energy storage remains technologically challenging. A simple and very fast method to form CN and CO bonds in reduced graphene oxide (RGO) and carbon nanotubes (CNTs) by an ultrasonic chemical reaction is described. Electrodes of nitrogen- or oxygen-doped RGO (N-RGO or O-RGO, respectively) are fabricated via the fixation between N or O carrier gas molecules and ultrasonically activated RGO. The materials exhibit much higher capacitance after doping (133, 284, and 74 F g for O-RGO, N-RGO, and RGO, respectively). Furthermore, the doped 2D RGO and 1D CNT materials are prepared by layer-by-layer deposition using ultrasonic spray to form 3D porous electrodes. These electrodes demonstrate very high specific capacitances (62.8 mF cm and 621 F g at 10 mV s for N-RGO/N-CNT at 1:1, v/v), high cycling stability, and structural flexibility.
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January 2025
SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India.
Understanding the resistive switching (RS) behavior of oxide-based memory devices at nanoscale is crucial for advancement of high-integration density in-memory computing platforms. This study explores a comprehensive growth parameter space to address the RS behavior of pulsed-laser-deposited substoichiometric TiO (TiO) thin films in search of tailored nanoscale memristors with low-power consumption and high stability. Conductive-atomic-force-microscopy-based measurements facilitate deciphering the switching behavior at nanoscale, providing a direct avenue to understand the microstructure-property relationships.
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January 2025
State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, China.
The scarcity of cost-effective and durable iridium-free anode electrocatalysts for the oxygen evolution reaction (OER) poses a significant challenge to the widespread application of the proton exchange membrane water electrolyzer (PEMWE). To address the electrochemical oxidation and dissolution issues of Ru-based electrocatalysts, an electron-donating modification strategy is developed to stabilize WRuO under harsh oxidative conditions. The optimized catalyst with a low Zirconium doping (Zr, 1 wt.
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January 2025
School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, China.
As emerging cutting-edge energy storage technologies, aqueous zinc-ion batteries (AZIBs) have garnered extensive research attention for its high safety, low cost, abundant raw materials, and, eco-friendliness. Nevertheless, the commercialization of AZIBs is mainly limited by insufficient development of cathode materials. Among potential candidates, MXene-based materials stand out as a promising option for their unique combination of hydrophilicity and conductivity.
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January 2025
National Energy Metal Resources and New Materials Key Laboratory, Engineering Research Center of the Ministry of Education for Advanced Battery Materials, Hunan Provincial Key Laboratory of Nonferrous Value-Added Metallurgy, School of Metallurgy and Environment, Central South University, Changsha, 410083, P. R. China.
Electrochemical CO reduction (CORR) in membrane electrode assembly (MEA) represents a viable strategy for converting CO into value-added multi-carbon (C) compounds. Therefore, the microstructure of the catalyst layer (CL) affects local gas transport, charge conduction, and proton supply at three-phase interfaces, which is significantly determined by the solvent environment. However, the microenvironment of the CLs and the mechanism of the solvent effect on C selectivity remains elusive.
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January 2025
Microsystems Group, School of Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UK.
The increasing demand for processing large volumes of data for machine learning (ML) models has pushed data bandwidth requirements beyond the capability of traditional von Neumann architecture. In-memory computing (IMC) has recently emerged as a promising solution to address this gap by enabling distributed data storage and processing at the micro-architectural level, significantly reducing both latency and energy. In this article, we present In-Memory comPuting architecture based on Y-FlAsh technology for Coalesced Tsetlin machine inference (IMPACT), underpinned on a cutting-edge memory device, Y-Flash, fabricated on a 180 nm complementary metal oxide semiconductor (CMOS) process.
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