Exciting a ferromagnetic material with an ultrashort IR laser pulse is known to induce spin dynamics by heating the spin system and by ultrafast spin diffusion processes. Here, we report on measurements of spin-profiles and spin diffusion properties in the vicinity of domain walls in the interface region between a metallic Al layer and a ferromagnetic Co/Pd thin film upon IR excitation. We followed the ultrafast temporal evolution by means of an ultrafast resonant magnetic scattering experiment in surface scattering geometry, which enables us to exploit the evolution of the domain network within a 1/e distance of 3 nm to 5 nm from the Al/FM film interface. We observe a magnetization-reversal close to the domain wall boundaries that becomes more pronounced closer to the Al/FM film interface. This magnetization-reversal is driven by the different transport properties of majority and minority carriers through a magnetically disordered domain network. Its finite lateral extension has allowed us to measure the ultrafast spin-diffusion coefficients and ultrafast spin velocities for majority and minority carriers upon IR excitation.
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http://dx.doi.org/10.1038/s41598-017-15234-7 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is reported. Using the flow-rate modulation epitaxy method, the full widths at half maximum (FWHMs) for the obtained (112̅2) AlGaN along [112̅3̅] and [11̅00] rocking curves are 0.
View Article and Find Full Text PDFInt J Biol Macromol
January 2025
Key Laboratory of Dairy Science, Ministry of Education, College of Food Science, Northeast Agricultural University, Harbin 150030, China; Food Laboratory of Zhongyuan, Luohe 462300, Henan, China; Key Laboratory of Infant Formula Food, State Administration for Market Regulation, Harbin 150030, China. Electronic address:
Whey protein hydrolysate (WPH) can be used to develop hypoallergenic foods. However, the stabilization mechanism of WPH-stabilized emulsion is not fully understood. Here, a real-time quartz crystal microbalance with dissipation monitoring (QCM-D) was used in conjunction with a rheometer to investigate the interfacial properties of WPH.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2025
Shaanxi Key Laboratory of Chemical Additives for Industry, College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China. Electronic address:
As smart electronic devices proliferate rapidly, concerns about electromagnetic radiation have become more prominent. Traditional electromagnetic shielding materials typically use three-dimensional porous foams, carbon structures, and film materials as their substrates. However, as electronic devices become more miniaturized, integrated, and precise, the large volume and limited functionality of foam materials have constrained their applications.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
Polyimide (PI)-based gas separation membranes are of great interest in the field of H purification owing to their good thermal stability, chemical stability, and mechanical properties. Among polyimide-based membranes, intrinsically microporous polyimides are easily soluble in common organic solvents, showing great potential for fabricating hollow fiber gas separation membranes. However, based on the solution-diffusion model, improving the free volume or the movability of polymer chains can improve gas permeability, but would result in poor thermal stability.
View Article and Find Full Text PDFNano Converg
January 2025
Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.
Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.
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