Beta gallium oxide (β-GaO) is an emerging ultrawide band gap (4.5 eV-4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-GaO thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-GaO nanomechanical resonators using β-GaO nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating β-GaO circular drumhead structures, we demonstrate multimode nanoresonators up to the sixth mode in high and very high frequency (HF/VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Young's modulus of E = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ∼40% upshift in frequency and ∼90% enhancement in quality (Q) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable β-GaO electronic, optoelectronic, and physical sensing devices.
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http://dx.doi.org/10.1021/acsami.7b13930 | DOI Listing |
J Acoust Soc Am
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Jianglu Mechanical Electrical Group Company Limited, Xiangtan 411105, China.
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Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
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Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory, Shenzhen 518111, China.
β-GaO is a candidate semiconductor material for high-power electronics due to its ultrawide bandgap and high Baliga's figure of merit. However, its -type doping is extremely difficult because of its low and flat band dispersion at its valence band maximum (VBM). A few reports have predicted that the VBM of β-GaO can be enhanced via alloying a specific metal (M), which enables -type conduction.
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Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India.
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College of Electronic Information Engineering, Changchun University of Science and Technology, Changchun 130022, China.
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